This invention is a novel nanocrystalline diamond (NCD) seeding and process technology which enables the direct extraction of heat from power devices such as GaN, SiC which operate at high current densities requiring rapid heat dissipation. The method comprises seeding NCD of about 6 nm diameter. Once seeded, the layer is grown to between 200 nm and 1 micrometer. This novel system pulls heat directly from the device layer, rather than through the substrate.
Novel method for depositing nanocrystalline diamond thin layers
Heat dissipation from the device layer rather than through the substrate
Especially valuable for Wide Band Gap materials such as GaN and SiC
This invention allows more efficient dissipation of heat from a high power, wide band gap device.
Power electronics.