Si-based UV photodetector using an efficient UV-to-visible down-conversion layer

Case ID:
2022-026

BACKGROUND

Ultra-violet (UV) photodetectors have broad applications in many areas such as scintillator light detection, time correlated photo-detection, ultra-fast fluorescent microscopy detection, and ultra-dense spatial imaging. While Si-based photodiodes are fully commercialized with a variety of applications even including single-photon avalanche photodiodes (SPADs) which offer low dark count rates, high detection efficiencies and high-count rates in the visible to near-infrared range. In the UV range, however, the penetration depth of UV light in Si is typically only a few nanometers and thus absorption occurs before the UV photon reaches the detection region in the Si-based photodetectors. As a result, traditional Si-based photodetectors show poor performance in UV regions.

 

SUMMARY OF TECHNOLOGY

Researchers at OSU have conceived an Si-based UV photodetector design which extends the detection region to UV wavelength in current Si-based photodetectors. An efficient UV-to-visible down-conversion layer is employed, converting the absorbed UV light to visible light; then the down-converted visible lights will be absorbed by the Si-based photodetector. The Si-based photodetectors will not absorb any UV lights directly, thus eliminating surface recombination issues which cause insufficient carrier collection. This novel detector approach will make a compact, low-cost, high-resolution, and high efficiency UV photodetectors and sensors.

UV down-conversion sensor

POTENTIAL AREAS OF APPLICATION

  • UV photodetectors/sensors
  • UV SPADs

MAIN ADVANTAGES

  • Low-cost
  • High-resolution
  • Reduced noise
  • High efficiency

 

STAGE OF DEVELOPMENT

Proof-of-concept

 

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Patent Information:
For Information, Contact:
Amanda Aker
Licensing Associate
Oklahoma State University
(405) 744-1450
amanda.aker@okstate.edu
Inventors:
Do Young Kim
Keywords:
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